Method to remove an oxide seam along gate stack edge, when...

Details Method to remove an oxide seam along gate stack edge, when... Method to remove an oxide seam along gate stack edge, when...

2008-09-02

2008-09-02

Schillinger, Laura M (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S316000

Reexamination Certificate

active

10626620

ABSTRACT:
An exposed top end of a vertical oxide spacer is removed, and a nitride layer is deposited in an amount sufficient to replace the removed portion prior to exposing a memory device to a self align contact etch process. The nitride layer may be used to prevent a short circuit through the oxide spacer. The present invention also provides memory devices that have a gate stack, a vertical spacer adjacent to the gate stack, in which the vertical spacer has a lower portion comprising an oxide and an upper portion comprising a nitride, and a continuous nitride layer overlaying the vertical spacer and the gate stack. The present invention further provides methods of fabricating the above devices, and processor systems which include the devices.

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