Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure
Reexamination Certificate
2008-05-06
2008-05-06
Pham, Hoai V (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Test or calibration structure
C257SE23179
Reexamination Certificate
active
10745749
ABSTRACT:
A test pixel for use in a CMOS image sensor is employed to evaluate a pixel quality by modulating a contact chain. The test pixel for use the CMOS image sensor including: a test pixel active area corresponding to each unit pixel active area, wherein the unit pixel active area has a floating diffusion contact, a VDD contact and an output contact therein; an active area contact having a first, a second and a third contacts disposed at predetermined locations of each test pixel active area, wherein the first, the second and the third contacts are correspondent to the floating diffusion contact, the VDD contact and the output contact in the unit pixel, respectively; a contact chain in order for a test current to flow vertically or a horizontally through the active area contact; a test pad having a first test pad and a second test pad; and a test gate of which a predetermined portion is overlapped over the test pixel active area, for applying a predetermined signal thereto.
REFERENCES:
patent: 6992327 (2006-01-01), Tone et al.
Blakely , Sokoloff, Taylor & Zafman LLP
Magna-Chip Semiconductor, Ltd.
Pham Hoai V
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