Structure of metal interconnect and fabrication method thereof

Details Structure of metal interconnect and fabrication method thereof Structure of metal interconnect and fabrication method thereof

2008-04-29

2008-04-29

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S692000, C438S733000, C438S740000, C257SE21170, C257SE21304, C257SE21435, C257SE21229, C257SE21058, C257SE21577, C257SE21585

Reexamination Certificate

active

11306590

ABSTRACT:
A process and structure for a metal interconnect includes providing a substrate with a first electric conductor, forming a first dielectric layer and a first patterned hard mask, using the first patterned hard mask to form a first opening and a second electric conductor, forming a second dielectric layer and a second patterned hard mask, using the second patterned hard mask as an etching mask and using a first patterned hard mask as an etch stop layer to form a second opening and a third electric conductor.

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