Semiconductor memory device and method of manufacturing the...

Details Semiconductor memory device and method of manufacturing the... Semiconductor memory device and method of manufacturing the...

2008-03-04

2008-03-04

Doan, Theresa T. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29178, C257SE29178, C257SE31062

Reexamination Certificate

active

10885749

ABSTRACT:
A semiconductor memory device includes a semiconductor substrate having a first region and a second region, a transistor placed in the first region of the semiconductor substrate, a first insulating film formed on the semiconductor substrate in the first and second regions and on the transistor, a first ferroelectric capacitor formed on the first insulating film in the first region and electrically connected to the transistor, a hydrogen barrier film formed above the first ferroelectric capacitor and above the first insulating film in the first and second regions, a first contact penetrating the hydrogen barrier film in the first region and electrically connected to the first ferroelectric capacitor, and a second contact which penetrates the hydrogen barrier film in the second region and which is in a floating state.

REFERENCES:
patent: 6611015 (2003-08-01), Ozaki et al.
patent: 6972449 (2005-12-01), Yoshikawa et al.
patent: 2004-349424 (2004-12-01), None

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