Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-09-30
2008-09-30
Lee, Hsien-ming (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S351000, C257S384000, C257S388000, C257S412000, C257SE27062, C438S169000, C438S199000, C438S592000, C438S655000
Reexamination Certificate
active
11037333
ABSTRACT:
A technique capable of reducing threshold voltage and reducing high-temperature heat treatment after forming a gate electrode is provided. An n-type MIS transistor or a p-type MIS transistor is formed on an active region isolated by an element isolation region of a semiconductor substrate. In the n-type MIS transistor, a gate electrode is formed through a gate insulating film, and the gate electrode is composed of a hafnium silicide film. On the other hand, in the p-type MIS transistor, a gate electrode is formed through a gate insulating film, and the gate electrode is composed of a platinum silicide film. Also, the gate electrodes are formed after the activation annealing (heat treatment) for activating impurities implanted into a source region and a drain region.
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Akiyama Koji
Kadoshima Masaru
Ohno Morifumi
Antonelli, Terry Stout & Kraus, LLP.
Lee Hsien-ming
Oky Electric Industry Co., Ltd.
Renesas Technology Corp.
Tokyo Electron Limited
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