Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2008-04-29
2008-04-29
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S459000, C257SE21561
Reexamination Certificate
active
11410082
ABSTRACT:
The present invention provides a manufacturing method of a semiconductor device at low cost and with high reliability. According to one feature of a method for manufacturing a semiconductor device includes the steps of forming a metal film over a substrate; forming a metal oxide film over the surface of the metal film by performing plasma treatment to the metal film in an atmosphere containing oxygen; forming a base film over the metal oxide film; forming an element layer having a thin film transistor over the base film; forming a protective layer over the element layer; forming an opening after selectively removing the metal film, the metal oxide film, the base film, the element layer, and the protective layer; separating the base film, the element layer, and the protective layer from the substrate; and sealing the base film, the element layer, and the protective layer by using flexible first and second films, in which an electron density of plasma around the substrate is 1×1011cm−3or more and 1×1013cm−3or less and an electron temperature of the plasma treatment is 0.5 eV or more and 1.5 eV or less.
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The Advancing Introduction of Plasma Oxynitriding Apparatus Adopted by More Than 10 LSI Makers, Nikkei Microdevices, Apr. 2005, pp. 100-103.
Kuwashima Kazutaka
Takano Tamae
Yamazaki Shunpei
Booth Richard A.
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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