Methods for forming semiconductor wires and resulting devices

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S296000, C257S347000, C257SE27112

Reexamination Certificate

active

10880294

ABSTRACT:
Methods for forming a wire from silicon or other semiconductor material are disclosed. Also disclosed are various devices including such a semiconductor wire. According to one embodiment, a wire is spaced apart from an underlying substrate, and the wire extends between a first end and an opposing second end, each of the first and second ends being affixed to the substrate. Other embodiments are described and claimed.

REFERENCES:
patent: 5578513 (1996-11-01), Maegawa
patent: 5646058 (1997-07-01), Taur et al.
patent: 6010921 (2000-01-01), Soutome
patent: 6137150 (2000-10-01), Takeuchi et al.
patent: 6290510 (2001-09-01), Fork et al.
patent: 6372604 (2002-04-01), Sakai et al.
patent: 6413802 (2002-07-01), Hu et al.
patent: 6423992 (2002-07-01), Fukuda et al.
patent: 6503800 (2003-01-01), Toda et al.
patent: 6509234 (2003-01-01), Krivokapic
patent: 6595787 (2003-07-01), Fork et al.
patent: 6759710 (2004-07-01), Chan et al.
patent: 6930030 (2005-08-01), Rausch et al.
patent: 6982460 (2006-01-01), Cohen et al.
patent: 2002/0090966 (2002-07-01), Hansen et al.
patent: 2002/0177282 (2002-11-01), Song
patent: WO 2004/093181 (2004-10-01), None
Peter Schubert et al, A New Epitaxy Techique for Devices Isolation and Advance Device Structures, 1989 IEEE, pp. 1-3.
Chul Lee, et al., Enhanced Data Retention of Damascene-finFET DRAM with Local Channel Implantation as <100> Fin Surface Orientation Engineering, Samsung Electronics, 2004 IEEE , Korea.
PCT International Search Report, PCT Application No. PCT/US2005/021911, filed Jun. 20, 2005, 11 pages.
Office Action mailed Mar. 30, 2006, U.S. Appl. No. 10/879,765, filed Jun. 28, 2004, 7 pages.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Methods for forming semiconductor wires and resulting devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods for forming semiconductor wires and resulting devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods for forming semiconductor wires and resulting devices will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3944108

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.