Light emitting devices with self aligned ohmic contacts

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices

Reexamination Certificate

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Details

C257S623000

Reexamination Certificate

active

10987136

ABSTRACT:
Methods of fabricating light emitting diodes and light emitting devices are provided that include a substrate, an n-type epitaxial region on the substrate and a p-type epitaxial region on the n-type epitaxial region. At least a portion of the p-type epitaxial region comprises a mesa with respect to the substrate. An ohmic contact is provided on an exposed portion of the p-type epitaxial layer. The ohmic contact is self aligned to a sidewall of the mesa and to the p-type epitaxial layer such that a sidewall of the ohmic contact is substantially aligned with a sidewall of the mesa and to the p-type epitaxial layer.

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International Search Report and the Written Opinion of the International Searching Authority for application No. PCT/US2004/03828 mailed on Apr. 29, 2005.

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