Refractory metal-based electrodes for work function setting...

Details Refractory metal-based electrodes for work function setting... Refractory metal-based electrodes for work function setting...

2008-01-22

2008-01-22

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S412000, C257S388000, C257SE21006

Reexamination Certificate

active

11465219

ABSTRACT:
The present invention provides, in one embodiment, a gate structure (100). The gate structure comprises a gate dielectric (105) and a gate (110). The gate dielectric includes a refractory metal and is located over a semiconductor substrate (115). The semiconductor substrate has a conduction band and a valence band. The gate is located over the gate dielectric and includes the refractory metal. The gate has a work function aligned toward the conduction band or the valence band. Other embodiments include an alternative gate structure (200), a method of forming a gate structure (300) for a semiconductor device (301) and a dual gate integrated circuit (400).

REFERENCES:
patent: 6642097 (2003-11-01), Rotondaro et al.
patent: 2004/0256679 (2004-12-01), Hu
patent: 2005/0101134 (2005-05-01), Brask et al.
Jaehoon Lee et al., “Tunable Work Function Dual Metal Gate Technology for Bulk and Non-Bulk CMOS,” IEEE, 2002, pp. 359-362.
D. G. Park et al., “Thermally robust dual-work function ALD-MNx MOSFETs using conventional CMOS process flow,” IEEE, 2004 Symposium on VLSI Technology, Digest of Technical Papers, pp. 186-187.
H. Y. Yu et al., “Thermally Robust High Quality HfN/HfO2 Gate Stack for Advanced CMOS Devices,” IEEE, 2003.

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