Semiconductor device and process for fabricating the same

Details Semiconductor device and process for fabricating the same Semiconductor device and process for fabricating the same

2008-04-08

2008-04-08

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

Reexamination Certificate

active

10915439

ABSTRACT:
A semiconductor device comprising at least two thin film transistors on a substrate having an insulating surface thereon, provided that the thin film transistors are isolated by oxidizing the outer periphery of the active layer of each of the thin film transistors to the bottom to provide an oxide insulating film.

REFERENCES:
patent: 4136434 (1979-01-01), Thibault et al.
patent: 4277883 (1981-07-01), Kaplan
patent: 4305200 (1981-12-01), Fu et al.
patent: 4425700 (1984-01-01), Sasaki et al.
patent: 4523963 (1985-06-01), Ohta et al.
patent: 4597160 (1986-07-01), Ipri
patent: 4604150 (1986-08-01), Lin
patent: 4649626 (1987-03-01), Leong
patent: 4808546 (1989-02-01), Moniwa et al.
patent: 4851363 (1989-07-01), Troxell et al.
patent: 4942441 (1990-07-01), Konishi et al.
patent: 5091334 (1992-02-01), Yamazaki et al.
patent: 5100815 (1992-03-01), Tsubone et al.
patent: 5130264 (1992-07-01), Troxell et al.
patent: 5212397 (1993-05-01), See et al.
patent: 5262350 (1993-11-01), Yamazaki et al.
patent: 5275851 (1994-01-01), Fonash et al.
patent: 5298455 (1994-03-01), Arai et al.
patent: 5313075 (1994-05-01), Zhang et al.
patent: 5322807 (1994-06-01), Chen et al.
patent: 5346839 (1994-09-01), Sundaresan
patent: 5372958 (1994-12-01), Miyasaka et al.
patent: 5403772 (1995-04-01), Zhang et al.
patent: 5409857 (1995-04-01), Watanabe et al.
patent: 5485019 (1996-01-01), Yamazaki et al.
patent: 5488001 (1996-01-01), Brotherton
patent: 5543352 (1996-08-01), Ohtani et al.
patent: 5585291 (1996-12-01), Ohtani et al.
patent: 5591987 (1997-01-01), Yamazaki et al.
patent: 5612250 (1997-03-01), Ohtani et al.
patent: 5705829 (1998-01-01), Miyanaga et al.
patent: 5726082 (1998-03-01), Park et al.
patent: 5733793 (1998-03-01), Song et al.
patent: 5773330 (1998-06-01), Park
patent: 5859443 (1999-01-01), Yamazaki et al.
patent: 5882960 (1999-03-01), Zhang et al.
patent: 5895933 (1999-04-01), Zhang et al.
patent: 6150203 (2000-11-01), Yamazaki et al.
patent: 6355941 (2002-03-01), Yamazaki et al.
patent: 6596573 (2003-07-01), Lee et al.
patent: 6706572 (2004-03-01), Yamazaki et al.
patent: 6730549 (2004-05-01), Zhang et al.
patent: 57-208124 (1982-12-01), None
patent: 61-251166 (1986-11-01), None
patent: 62-145775 (1987-06-01), None
patent: 62-219961 (1987-09-01), None
patent: 63-058875 (1988-03-01), None
patent: 63-110667 (1988-05-01), None
patent: 63-292682 (1988-11-01), None
patent: 64-015981 (1989-01-01), None
patent: 02-014579 (1990-01-01), None
patent: 02-130914 (1990-05-01), None
patent: 02-140915 (1990-05-01), None
patent: 03-203378 (1991-09-01), None
“Ultra LSI Process Data Hand Book,” Science Forum Co., Apr. 15, 1982, pp. 124-131.
Ito et al., “Thin Film Technique for VLSI,” Maruzen Co., Sep. 30, 1986, pp. 19-20.
Stanley Wolf, PhD., et al., “Silcon Processing for the VLSI ERA, vol. 1: Process Technology,” Lattice Press, 1986, pp. 216-218.
Katz, et al., “Defect Formation During High-Pressure, Low-Temperature Steam Oxidation of Silicon,” Journal of the Electrochem. Soc., vol. 125, No. 10, pp. 1680-1683.
Ligenza, “Oxidation of Silicon by High-Pressure Steam,” Journal of the Electrochem. Soc., vol. 109, No. 2, Feb. 1962, pp. 73-76.
Stanley Wolf, PhD., et al., “Silicon Processing for the VLSI ERA, vol. 1: Process Technology,” Lattice Press, 1986, pp. 171-175.
Stanley Wolf, PhD., et al., “Silicon Processing for the VLSI ERA, vol. 1: Process Technology,” Lattice Press, 1986, pp. 216-218.
H. W. Lam et al., Characteristics of MOSFETS Fabricated in Laser-Recrystallized Polysilicon Islands with a Retaining Wall Structure on an Insulating Substrate, IEEE Electron Device Letters, vol. EDL-1, No. 10, Oct. 1980, pp. 206-208.

Affiliated with

Also associated with

Rating

Semiconductor device and process for fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and process for fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and process for fabricating the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3940879