Nonvolatile semiconductor memory device and voltage...

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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Details

C365S189090, C365S204000, C257S299000, C375S374000, C327S144000, C327S148000

Reexamination Certificate

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11262759

ABSTRACT:
A nonvolatile semiconductor memory device includes a memory cell array of a plurality of memory cells; and a voltage generating circuit for generating a programming voltage to be applied to the memory cells. The voltage generating circuit includes a first voltage generating unit for generating a negative voltage through a first charge pump; and a second voltage generating unit for generating a positive voltage through a second charge pump. During an accelerated programming operation, the first voltage generating unit increases a pumping efficiency of the first charge pump using an external power supply voltage, and the second voltage generating unit directly outputs the external power supply voltage.

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