Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

Filed on

2008-09-30

Date issued

2008-09-30

Examiner

Menz, Douglas M (Department: 2891)

Patent Class

Active solid-state devices (e.g., transistors, solid-state diode

SubClass

Field effect device

SubSubClass

Having insulated electrode

Other Related Categories

C257S412000

Type

Reexamination Certificate

Status

active

Patent number

11235246

Description

ABSTRACT:
There is disclosed a semiconductor device comprising a P-channel MIS transistor which includes an N-type semiconductor layer, a first gate insulating layer formed on the N-type semiconductor layer and containing a carbon compound of a metal, and an N-channel MIS transistor which includes a P-type semiconductor layer, a second gate insulating layer formed on the P-type semiconductor layer, and a second gate electrode formed on the second gate insulating layer.

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patent: 7064066 (2006-06-01), Metz et al.
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patent: 2006/0163630 (2006-07-01), Callegari et al.
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patent: 2006/0197157 (2006-09-01), Koyama et al.
patent: 2004-207481 (2004-07-01), None
U.S. Appl. No. 11/461,646, filed Aug. 1, 2006, Koyama et al.
J. K. Schaeffer, et al., “Challenges for the Integration of Metal Gate Electrodes”, IEDM Tech. Dig., 2004, pp. 287-290.
H.-H. Tseng, et al., “Improved Short Channel Device Characteristics with Stress Relieved Pre-Oxide (SRPO) And a Novel Tantalum Carbon Alloy Metal Gate/HfO2Stack”, IEDM Tech. Dig., 2004, pp. 821-824.

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