Semiconductor device and method for manufacturing...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C438S149000

Reexamination Certificate

active

10944260

ABSTRACT:
A semiconductor device comprising electric field relieving regions8aand8bfor alleviating the electric fields between a source layer6aand body-source connection layers7aand7bformed along borders between the source layer6aand the body-source connection layers7aand7b, and source contacts C1and C2for making contact between the source layer6aand the body-source connection layers7aand7bare formed to extend across the electric field relieving regions8aand8b, respectively.

REFERENCES:
patent: 5815223 (1998-09-01), Watanabe et al.
patent: 6114715 (2000-09-01), Hamada
patent: 6225665 (2001-05-01), Hirano
patent: 6383850 (2002-05-01), Hirano
patent: 6573533 (2003-06-01), Yamazaki
patent: 6825820 (2004-11-01), Yamazaki et al.
patent: 6940138 (2005-09-01), Yamazaki
patent: 02-214165 (1990-08-01), None
patent: 05-067785 (1993-03-01), None
patent: 2000-269509 (2000-09-01), None
patent: 2001-94114 (2001-04-01), None
patent: 2004-200475 (2004-07-01), None
Japanese Office Action dated Jul. 3, 2007.

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