High performance field effect transistor with lai region

Details High performance field effect transistor with lai region High performance field effect transistor with lai region

1995-09-29

1997-06-03

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257403, 257412, H01L 2976, H01L 2994, H01L 31062

Patent

active

056357494

ABSTRACT:
A MOSFET transistor device with a gate formed over a lightly doped semiconductor substrate with a gate, and a source region and a drain region. V.sub.T1 ions are uniformly implanted into the surface of the substrate forming a V.sub.T region with substantially uniform doping in the upper portion of the substrate near the surface thereof. A gate oxide layer is formed on the substrate. A gate conductor is deposited over the gate oxide layer. A large angle implant is implanted into the region of the device over the source region. Then ions are implanted to form the source and drain regions which are self-aligned with the gate.

REFERENCES:
patent: 5079620 (1992-01-01), Shur
patent: 5244823 (1993-09-01), Adan
patent: 5268590 (1993-12-01), Pfiester et al.
patent: 5510279 (1996-04-01), Chien et al.

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