Semiconductor device comprising a salicide structure

Details Semiconductor device comprising a salicide structure Semiconductor device comprising a salicide structure

1995-12-20

1997-06-03

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257383, 257384, 257388, 257412, 257413, 257914, H01L 2976

Patent

active

056357460

ABSTRACT:
After formation a gate electrode and source/drain regions, N ions or O ions are implanted into a predetermined region using a resist mask, and a Ti layer is deposited on the entire face of a substrate, and then the Ti layer is silicided in self-alignment by a heat treatment, whereby a high resistivity TixNySiz mixing layer is formed the predetermined region on the gate electrode and the source/drain regions 10, and a low resistivity TiSi.sub.2 layer 12 is formed on another region.

REFERENCES:
patent: 5021853 (1991-06-01), Mistry

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