Memory cell using a dielectric having non-uniform thickness

Details Memory cell using a dielectric having non-uniform thickness Memory cell using a dielectric having non-uniform thickness

2008-01-08

2008-01-08

Purvis, Sue A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S213000, C257S288000, C257S314000, C257SE29309

Reexamination Certificate

active

11341813

ABSTRACT:
A memory cell is programmed by injecting charge into a charge storage layer of the memory cell. A desired programmed charge results in the charge storage layer over an edge portion of a channel region of the memory cell. An undesired programmed charge results in the charge storage layer over an inner portion of the channel region. Charge tunneling is used to substantially remove the undesired programmed charge in the charge storage layer. In one form the memory cell has a substrate having a channel region, a first dielectric layer over the substrate and a charge storage layer over the first dielectric layer. A second dielectric layer over the charge storage layer has a first portion that is thicker than a second portion to selectively control the charge tunneling.

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Chan, T. Y. et al.; “A True Single-Transistor Oxide-Nitride-Oxide EEPROM Device”; IEEE Electronic Device Letters; Mar. 1987; pp. 93-95; vol. EDL-8, No. 3; IEEE.

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