Semiconductor device having an increased withstand voltage again

Details Semiconductor device having an increased withstand voltage again Semiconductor device having an increased withstand voltage again

1996-02-21

1997-06-03

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257328, 257339, 257341, 257409, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

056357435

ABSTRACT:
It is the object of the invention to provide a semiconductor device with a high-voltage breakdown characteristic against an overvoltage surge from an inductance load. The semiconductor device according to the invention has a lower withstand voltage of a substrate diode compared with that between source and drain electrodes, and a P.sup.- -substrate has an increased impurity concentration. The inverse surge generated by the inductance load is absorbed by the substrate diode and does not flow into a P-base of MOSFET. Accordingly, a parasitic NPN transistor does not turn on, and thereby the semiconductor device with the high withstand voltage against the inverse surge voltage can be provided.

REFERENCES:
patent: 4300150 (1981-11-01), Colak
patent: 5034790 (1991-07-01), Mukherjee

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