Memory device

Details Memory device Memory device

2008-01-15

2008-01-15

Elms, Richard T. (Department: 2824)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S094000, C365S104000, C365S149000, C365S196000

Reexamination Certificate

active

11448521

ABSTRACT:
A sense amplifier circuit for a non-volatile semiconductor memory device is used to output data written in a selected non-volatile memory cell and is constructed as a current mirror circuit including a first mirror transistor and a second mirror transistor of a mirror circuit. A selection gate transistor and a detection transistor of the selected non-volatile memory cell are included as part of a load circuit connected to a drain electrode of the second mirror transistor. The detection transistor has a drain electrode linked to a source electrode of the selection gate transistor. An operating current of the selection gate transistor is smaller than an operating current of the detection transistor, and an electric current output from the second mirror transistor is determined by the operating current of the selection gate transistor. This arrangement enables determination of the stable operating current of the memory cell irrespective of the state of a floating gate of the detection transistor. Data corresponding to the writing condition of the memory cell is thus stably output from the sense amplifier circuit, based on the stable operating current of the memory cell.

REFERENCES:
patent: 5331590 (1994-07-01), Josephson et al.
patent: 5394037 (1995-02-01), Josephson et al.
patent: 5615146 (1997-03-01), Gotou
patent: 5661686 (1997-08-01), Gotou

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