Semiconductor memory device with increased node capacitance

Details Semiconductor memory device with increased node capacitance Semiconductor memory device with increased node capacitance

2008-04-01

2008-04-01

Ha, Nathan W (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

Reexamination Certificate

active

10596029

ABSTRACT:
An integrated circuit semiconductor memory device having the BOX layer removed from under the gate of a storage transistor to increase the gate-to-substrate capacitance and reduce the soft error rate. The increased node capacitance thus obtained is achieved without requiring a corresponding increase in area.

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