Method for forming recesses

Details Method for forming recesses Method for forming recesses

2008-01-08

2008-01-08

Fourson, George R. (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S700000, C438S705000, C438S944000, C438S947000, C257SE21039

Reexamination Certificate

active

11195294

ABSTRACT:
A method for forming a recess. The method includes providing a substrate with two protrusions having a first side wall and a second side wall opposite to the first side wall disposed above the substrate, conformally forming a mask layer on the substrate and the protrusions, tilt implanting the mask layer using a first implanting mask adjacent to the first side wall of the protrusions, removing implanted portions of the mask layer to form a patterned mask layer, and etching the substrate using the patterned mask layer, thereby forming a recess.

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