Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Flip chip
Reexamination Certificate
2008-03-04
2008-03-04
Pizarro, Marcos D. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Flip chip
C257S724000, C257SE23169, C257SE25014, C361S306200, C361S763000, C361S782000
Reexamination Certificate
active
11059469
ABSTRACT:
A capacitor comprises a first conducting film12formed on a substrate10, a first dielectric film14formed on the first conducting film, a second conducting film18formed on the first dielectric film, a second dielectric film22formed above the second conducting film, covering the edge of the second conducting film, a third conducting film34formed above the second dielectric film, covering a part of the second dielectric film covering the edge of the second conducting film. The capacitor further comprises an insulation film28covering the edge of the second conducing film or the part of the second dielectric film. An effective thickness of the insulation film between the second conducting film and the third conducing film in the region near the edge of the second conducting film can be increased, whereby concentration of electric fields in the region near the edge of the second conducting film. Consequently, the capacitor can have large capacitance without lowering voltage resistance.
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Karasawa Kazuaki
Kurihara Kazuaki
Shioga Takeshi
Fujitsu Limited
Pizarro Marcos D.
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