Semiconductor device including a trench capacitor

Details Semiconductor device including a trench capacitor Semiconductor device including a trench capacitor

2008-01-22

2008-01-22

Quach, T. N. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S304000, C257SE27092

Reexamination Certificate

active

11332153

ABSTRACT:
A device including a trench capacitor formed in a semiconductor substrate for configuring a DRAM cell together with a cell transistor is provided. The device also includes a cell transistor including diffused regions formed in a surface of a semiconductor substrate; a trench capacitor formed in said semiconductor substrate for configuring a DRAM cell together with said cell transistor; a buried strap formed in said semiconductor substrate to connect said diffused region to said trench capacitor; and a collar insulation film formed on sides of said buried strap.

REFERENCES:
patent: 6291286 (2001-09-01), Hsiao
patent: 6426526 (2002-07-01), Divakaruni et al.
patent: 6872629 (2005-03-01), Hsiao et al.
patent: 6917064 (2005-07-01), Kito et al.
patent: 7081382 (2006-07-01), Hsu
patent: 7153738 (2006-12-01), Cheng et al.
patent: 2005/0196918 (2005-09-01), Schwerin
patent: 2001-196555 (2001-07-01), None
Amon et al., “A Highly Manufacturable Deep Trench Based DRAM Cell Layout with a Planar Array Device in a 70nm Technology”, IEDM, Tech. Dig., 4 sheets, (2004).

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