Method of operating a dynamic random access memory cell

Details Method of operating a dynamic random access memory cell Method of operating a dynamic random access memory cell

2008-01-15

2008-01-15

Nguyen, VanThu (Department: 2824)

Static information storage and retrieval

Read/write circuit

Data refresh

C365S149000

Reexamination Certificate

active

11494691

ABSTRACT:
A method of operating a dynamic random access memory cell is disclosed. The true logic state of a stored bit is rewritten to a first storage node of the memory cell and the complementary logic state of the stored bit is rewritten to a second storage node of the memory cell. One of the acts of rewriting is achievable faster than the other and the rewriting of the true and complementary logic states is completed upon achieving the one act of rewriting that is faster than the other.

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