In-service reconfigurable DRAM and flash memory device

Details In-service reconfigurable DRAM and flash memory device In-service reconfigurable DRAM and flash memory device

2008-04-15

2008-04-15

Nguyen, Viet Q. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S185080, C365S185170, C365S185010, C365S063000

Reexamination Certificate

active

11435621

ABSTRACT:
A memory cell that has both a DRAM cell and a non-volatile memory cell. The non-volatile memory cell might include a flash memory or an NROM cell. The memory cell is comprised of a vertical floating body transistor with dual gates, one on either side of a vertical pillar of a substrate. One gate is a polysilicon gate and gate insulator that is adjacent to the floating body of the transistor and acts as a DRAM cell. The non-volatile memory cell is constructed on the other side of the pillar with a floating gate or NROM structure. The DRAM and non-volatile cells are linked by a drain region coupling the two cells to a memory array bitline. The bottom of trenches on either side of the pillar have source regions that are linked to respective source lines of the memory array.

REFERENCES:
patent: 5331188 (1994-07-01), Acovic
patent: 6166407 (2000-12-01), Ohta
patent: 6594192 (2003-07-01), McClure
patent: 6771538 (2004-08-01), Shukuri
patent: 6781916 (2004-08-01), McClure
patent: 6798008 (2004-09-01), Choi
patent: 7158410 (2007-01-01), Bhattacharyya et al.
patent: 7190616 (2007-03-01), Forbes et al.
patent: 2006/0044870 (2006-03-01), Bhattacharyya et al.
patent: 2006/0146594 (2006-07-01), Bhattacharyya et al.
patent: 2006/0146605 (2006-07-01), Bhattacharyya et al.
patent: 2006/0146606 (2006-07-01), Bhattacharyya et al.
patent: 2006/0152962 (2006-07-01), Bhattacharyya et al.
patent: 2006/0176726 (2006-08-01), Bhattacharyya et al.

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