Manufacturing method of one-time programmable read only memory

Details Manufacturing method of one-time programmable read only memory Manufacturing method of one-time programmable read only memory

2008-01-01

2008-01-01

Luu, Chuong A. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S281000, C438S601000, C438S467000

Reexamination Certificate

active

11308550

ABSTRACT:
An one-time programmable read only memory is provided. An N-type doping region and a first P-type doping layer are disposed in a P-type semiconductor substrate sequentially. A second P-type doping layer is disposed between the first P-type doping layer and the N-type doping region. The second P-type doping layer with higher doping level, which has a linear structure, is served as a bit line. An electrically conductive layer is disposed over the P-type semiconductor substrate. The electrically conductive layer also has a linear structure that crosses over the first P-type doping layer. The first N-type doping layer is disposed in the P-type semiconductor substrate between the electrically conductive layer and the first P-type doping layer. The arrangement of N-type and P-type doping layer is used to be selective diode device. An anti-fuse layer is disposed between the electrically conductive layer and the first N-type doping layer.

REFERENCES:
patent: 5789795 (1998-08-01), Sanchez et al.
patent: 6185122 (2001-02-01), Johnson et al.
patent: 6307213 (2001-10-01), Huang et al.
patent: 6753244 (2004-06-01), Wu et al.
patent: 6806551 (2004-10-01), Liu et al.

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