Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2008-03-25
2008-03-25
Picardat, Kevin M. (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S154000, C438S164000, C257S350000
Reexamination Certificate
active
11175347
ABSTRACT:
A method for manufacturing a thin film transistor results in a thin film transistor including a semiconductor film, a channel region provided in the semiconductor film, source and drain regions sandwiching the channel region, and a gate electrode facing the channel region with an intermediary of a gate insulating film. The method includes depositing a droplet that includes a semiconductor material on a substrate; and forming the semiconductor film by drying the droplet to precipitate the semiconductor material on at least a peripheral edge of the droplet.
REFERENCES:
patent: 6479331 (2002-11-01), Takemura
patent: 6767775 (2004-07-01), Yudasaka et al.
patent: 6838361 (2005-01-01), Takeo
patent: 7022534 (2006-04-01), Gupta et al.
patent: 7229862 (2007-06-01), Yamazaki et al.
patent: 2005/0026410 (2005-02-01), Yamazaki et al.
patent: 2005/0263765 (2005-12-01), Maekawa
patent: 2006/0035064 (2006-02-01), Hirai
patent: 1297582 (2001-05-01), None
patent: 1462484 (2003-12-01), None
patent: 59-075205 (1984-04-01), None
patent: 2000-353594 (2000-12-01), None
patent: 2002-076358 (2002-03-01), None
Masuda Takashi
Yudasaka Ichio
Oliff & Berridg,e PLC
Picardat Kevin M.
Seiko Epson Corporation
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