Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2008-09-09

2008-09-09

Baumeister, Bradley W. (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29258

Reexamination Certificate

active

11265208

ABSTRACT:
The present application provides a semiconductor device including a first-conductivity type semiconductor substrate, a pillar structure portion formed on the first-conductivity type semiconductor substrate and formed of five semiconductor pillar layers arranged in one direction parallel to a main surface of the first-conductivity type semiconductor substrate, and isolation insulating portions formed on the first-conductivity type semiconductor substrate and sandwiching the pillar structure portion between the isolation insulating portions, wherein the pillar structure portion is formed of a first first-conductivity type pillar layer, a second first-conductivity type pillar layer and a third first-conductivity type pillar layer which sandwich the first first-conductivity type pillar layer, a first second-conductivity type pillar layer provided between the first first-conductivity type pillar layer and the second first-conductivity type pillar layer, and a second second-conductivity type pillar layer provided between the first first-conductivity type pillar layer and the third first-conductivity type pillar layer.

REFERENCES:
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patent: 2005/0181577 (2005-08-01), Hshieh
patent: 8-222735 (1996-08-01), None
patent: 2002-170955 (2002-06-01), None

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