Sub-lithographics opening for back contact or back gate

Details Sub-lithographics opening for back contact or back gate Sub-lithographics opening for back contact or back gate

2008-05-13

2008-05-13

Quach, T. N. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S332000, C257SE29242, C438S639000

Reexamination Certificate

active

11239834

ABSTRACT:
A low resistance buried back contact for SOI devices. A trench is etched in an insulating layer at minimum lithographic dimension, and sidewalls are deposited in the trench to decrease its width to sublithographic dimension. Conducting material is deposited in the trench, which serves as a low-resistance contact to the back side of the device. In another embodiment, the trench-fill material is separated from the device by an insulating layer, and serves as a back gate structure.

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