Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-03-04
2008-03-04
Nguyen, Cuong (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S326000
Reexamination Certificate
active
11135305
ABSTRACT:
A nonvolatile semiconductor memory device includes nonvolatile semiconductor memory elements and a first conductor. Each nonvolatile semiconductor memory element includes a gate insulating film including a charge trapping layer formed on a substrate, a gate electrode formed on the gate insulating film, and a pair of diffusion layers formed in a surface layer of the substrate with the gate electrode interposed therebetween and functioning as a source or a drain. The first conductor electrically connects a pair of diffusion layers of each nonvolatile semiconductor memory element to each other. Ends of each gate electrode which respectively face a pair of diffusion layers of a corresponding nonvolatile semiconductor memory element are partially covered by the first conductor when viewed two-dimensionally.
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