Bipolar transistor compatible with CMOS processes

Details Bipolar transistor compatible with CMOS processes Bipolar transistor compatible with CMOS processes

1995-06-07

1998-08-11

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257371, 257336, 257344, 257408, H01L 2976

Patent

active

057930856

ABSTRACT:
A bipolar transistor, comprising a collector region, a base region, and an emitter region, is a type which is compatible to CMOS processes leading to the formation, on a semiconductor substrate, of N-channel and P-channel MOS transistors having respective source and drain regions. In such bipolar transistor, the collector region is a substrate diffused pocket and the base region is formed within the diffused pocket simultaneously with the source and drain regions of the P-channel MOS transistors. Further, the emitter region is incorporated, in turn, to the base region simultaneously with the source and drain regions of the N-channel MOS transistors.

REFERENCES:
patent: 4120707 (1978-10-01), Beasom
patent: 4403395 (1983-09-01), Curran
patent: 4628341 (1986-12-01), Thomas
patent: 4764482 (1988-08-01), Hsu
patent: 4806499 (1989-02-01), Shinohara
patent: 5045912 (1991-09-01), Ohki
patent: 5066602 (1991-11-01), Takemoto et al.
patent: 5179036 (1993-01-01), Matsumoto

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