Method of forming a CMOS structure having gate insulation...

Details Method of forming a CMOS structure having gate insulation... Method of forming a CMOS structure having gate insulation...

2008-09-23

2008-09-23

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S392000, C257S402000, C257S406000, C257S410000

Reexamination Certificate

active

11118951

ABSTRACT:
The semiconductor integrated circuit device employs on the same silicon substrate a plurality of kinds of MOS transistors with different magnitudes of tunnel current flowing either between the source and gate or between the drain and gate thereof. These MOS transistors include tunnel-current increased MOS transistors at least one of which is for use in constituting a main circuit of the device. The plurality of kinds of MOS transistors also include tunnel-current reduced or depleted MOS transistors at least one of which is for use with a control circuit. This control circuit is inserted between the main circuit and at least one of the two power supply units.

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