Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2008-01-08
2008-01-08
Vinh, Lan (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S404000, C438S410000, C438S706000
Reexamination Certificate
active
10632570
ABSTRACT:
A method and apparatus for providing integrated active regions on silicon-on-insulator (SOI) devices by oxidizing a portion of the active layer. When the active layer of the SOI wafer is relatively thick, such as about 200 Å to 1000 Å or greater, the etching process partially removes the active layer. The remaining active layer is oxidized prior to a wet dip for removing the mask layer, preventing the wet dip process from undercutting the active region. When the active layer of the SOI wafer is relatively thin, such as about 25 Å to 400 Å, the partial etching step may be reduced or eliminated. In this case, the active layer is oxidized with little or no etching of the active layer. The exposed active layer is oxidized to prevent the wet dip process from undercutting the active region.
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Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
Vinh Lan
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