Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-03-18
2008-03-18
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S369000, C257S555000
Reexamination Certificate
active
11261613
ABSTRACT:
At an element formation surface side of a p-type Si substrate, a digital circuit and an analog circuit are provided. The analog circuit includes a p-type well and n-type wells formed at the element formation surface side of the p-type Si substrate. The analog circuit includes a deep n-type well located closer to the bottom side of the p-type Si substrate than the p-type well, so as to isolate the p-type well from a bottom-side region of the p-type Si substrate. The deep n-type well includes a first deep n-type well. The deep n-type well includes a second deep n-type well located closer to the bottom side of the p-type Si substrate than the first deep n-type well, and having an n-type impurity concentration, which is different from the first deep n-type well.
REFERENCES:
patent: 6472716 (2002-10-01), Igaue et al.
patent: 2006/0157818 (2006-07-01), Williams et al.
patent: 05-190783 (1993-07-01), None
patent: 06-069436 (1994-03-01), None
Nakashiba Yasutaka
Ohkubo Hiroaki
NEC Electronics Corporation
Tran Tan
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