Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2008-04-22
2008-04-22
Baumeister, B. William (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S200000, C438S237000, C257S350000, C257S357000, C257SE21704, C257SE21415
Reexamination Certificate
active
11127329
ABSTRACT:
A method is provided for fabricating a semiconductor on insulator (SOI) device. The method includes, in one embodiment, providing a monocrystalline silicon substrate having a monocrystalline silicon layer overlying the substrate and separated therefrom by a dielectric layer. A gate electrode material is deposited and patterned to form a gate electrode and a spacer. Impurity determining dopant ions are implanted into the monocrystalline silicon layer using the gate electrode as an ion implant mask to form spaced apart source and drain regions in the monocrystalline silicon layer and into the monocrystalline silicon substrate using the spacer as an ion implant mask to form spaced apart device regions in the monocrystalline substrate. Electrical contacts are then formed that contact the spaced apart device regions.
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International Search Report for PCT/US2006/014626, mailed Aug. 16, 2006.
Advanced Micro Devices , Inc.
Baumeister B. William
Fulk Steven J.
Ingrassia Fisher & Lorenz P.C.
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