Methods of programming silicon oxide nitride oxide...

Details Methods of programming silicon oxide nitride oxide... Methods of programming silicon oxide nitride oxide...

2008-03-25

2008-03-25

Phung, Anh (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185260, C365S185290

Reexamination Certificate

active

11432375

ABSTRACT:
A method of programming a silicon oxide nitride oxide semiconductor (SONOS) memory device is provided. The SONOS memory device includes a substrate, first and second impurity regions spaced apart on the substrate, a gate oxide layer formed over the substrate between the first and second impurity regions, a trap layer formed over the gate oxide layer, an insulation layer formed over the trap layer, and a gate electrode formed over the insulation layer. The method of programming the SONOS device includes writing data into the SONOS memory device by applying a first voltage to the first impurity region, a gate voltage to the gate electrode, and a second voltage to the second impurity region, where the second voltage is a negative voltage.

REFERENCES:
patent: 7170794 (2007-01-01), Kim et al.
patent: 7184316 (2007-02-01), Cho et al.
patent: 2003/0224564 (2003-12-01), Kang et al.
patent: 2004-111963 (2004-04-01), None
patent: 1020040046016 (2004-06-01), None
patent: 1020040072340 (2004-08-01), None

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