Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2008-05-06

2008-05-06

Clark, Jasmine J (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

With lattice constant mismatch

C257S077000, C257S200000, C257S201000, C257S617000, C257S618000, C257S627000, C257S628000, C257SE33003, C257SE33006, C257SE31049, C257SE29104, C257SE29105, C257SE21699

Reexamination Certificate

active

11072279

ABSTRACT:
A high quality silicon carbide (SiC) layer being substantially lower in threading dislocation density than a prior layer is formed on silicon (Si) substrate. A semiconductor device is fabricated in such a way that a semiconductor buffer layer containing Si in part and being higher in defect density than a Si substrate is formed on the Si substrate on the upper portion of which are formed a plurality of pairs of facets being mirror-symmetrical to the surface orientation of a semiconductor substrate, further on the top of the layer a SiC layer is sequentially formed.

REFERENCES:
patent: 5032893 (1991-07-01), Fitzgerald et al.
patent: 6403975 (2002-06-01), Brunner et al.
patent: 6416578 (2002-07-01), Nakano et al.
patent: 6475456 (2002-11-01), Nakano et al.
patent: 6617182 (2003-09-01), Ishida et al.
patent: 2003/0012249 (2003-01-01), Eisenbeiser
patent: 2003/0089921 (2003-05-01), Jordan et al.
patent: 6-216037 (1994-08-01), None
patent: 7-147461 (1995-06-01), None
patent: 2000-164929 (2000-06-01), None
patent: 2000-178740 (2000-06-01), None

Affiliated with

Also associated with

Rating

Semiconductor device and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and manufacturing method thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3913096