Semiconductor device having SOI structure and manufacturing...

Details Semiconductor device having SOI structure and manufacturing... Semiconductor device having SOI structure and manufacturing...

2008-03-04

2008-03-04

Toledo, Fernando L. (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S353000, C438S289000

Reexamination Certificate

active

09635832

ABSTRACT:
A fine semiconductor device having a short channel length while suppressing a short channel effect. Linearly patterned or dot-patterned impurity regions104are formed in a channel forming region103so as to be generally parallel with the channel direction. The impurity regions104are effective in suppressing the short channel effects. More specifically, the impurity regions104suppress expansion of a drain-side depletion layer, so that the punch-through phenomenon can be prevented. Further, the impurity regions cause a narrow channel effect, so that reduction in threshold voltage can be lessened.

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