Semiconductor device and an integrated circuit card

Details Semiconductor device and an integrated circuit card Semiconductor device and an integrated circuit card

2008-03-04

2008-03-04

Purvis, Sue A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S206000, C257S207000, C257S208000, C257S209000, C257S314000, C257S315000, C257S390000, C257S391000, C257SE27103, C257SE29129, C365S185010, C365S185050, C365S185260

Reexamination Certificate

active

11195683

ABSTRACT:
There is provided a technology capable of enhancing reliability in rewrite of storage information in a nonvolatile memory while checking an increase in area of a memory array thereof. With a memory array configuration, individual bit lines are connected to two memory cells sharing a source, and disposed at symmetrical positions, respectively, and two lengths of metal interconnections (the bit lines) are disposed with respect to a width in the direction of a channel width of a region occupied by one of the memory cells. In contrast, respective control gates of the memory cells corresponding to two word are rendered at an identical potential, and respective memory gates thereof are rendered at an identical potential, thereby disposing three lengths of metal interconnections (a control gate control line, memory gate control line, and common source line) with respect to a length of the regions occupied by the two memory cells in the direction of a channel length.

REFERENCES:
patent: 7045848 (2006-05-01), Shukuri
patent: 2004/023385 (2004-03-01), None

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