Method for producing an annular microstructure element

Details Method for producing an annular microstructure element Method for producing an annular microstructure element

2008-01-08

2008-01-08

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S048000, C257SE21665

Reexamination Certificate

active

11112743

ABSTRACT:
An annular microstructure element, in particular an annularly arranged monolayer or multilayer thin film, is formed over a substrate (S), e.g., for use in a magnetoresistive memory. To that end, a masking layer is applied over the substrate. An opening (C) is etched into the masking layer, so that a partial region of the surface is uncovered. The etching operation is performed in such a way that the opening (C) is formed with an overhang (B). The overhang at least partially shades the uncovered surface from an incident particle beam (TS). A particle beam (TS) is directed at the substrate (S) at an oblique angle (α) of incidence. In this case, the substrate (S) is rotated relative to the directed particle beam (TS). From the particle beam, material is thereby deposited annularly on the uncovered surface for the purpose of forming a hole-like microstructure element (R).

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Yoder, Max N., “Microelectronics / Nanoelectronics and the 21stCentury,” IEEE 2001, pp. 2-7.

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