Semiconductor device

Details Semiconductor device Semiconductor device

2008-04-15

2008-04-15

Ho, Tu-Tu V. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S307000, C257S347000, C257SE27016

Reexamination Certificate

active

11409040

ABSTRACT:
While improving the frequency characteristics of a decoupling capacitor, suppressing the voltage drop of a source line and stabilizing it, the semiconductor device which suppressed decline in the area efficiency of decoupling capacitor arrangement is offered.Decoupling capacitors DM1and DM2are connected between the source line connected to the pad for high-speed circuits which supplies electric power to circuit block C1, and the ground line connected to a ground pad, and the capacitor array for high-speed circuits is formed. A plurality of decoupling capacitor DM1are connected between the source line connected to the pad for low-speed circuits which supplies electric power to circuit block C2, and the ground line connected to a ground pad, and the capacitor array for low-speed circuits is formed. Decoupling capacitor DM1differs in the dimension of a gate electrode from DM2.

REFERENCES:
patent: 6967557 (2005-11-01), Hagios et al.
patent: 2002/0109205 (2002-08-01), Sawada et al.
patent: 2002-76271 (2002-03-01), None
patent: 2002-246548 (2002-08-01), None

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