Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-09-02
2008-09-02
Elms, Richard T. (Department: 2824)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S329000, C257S330000
Reexamination Certificate
active
11183995
ABSTRACT:
A semiconductor device may include a fin structure having source/drain regions and channel fins connected between source/drain patterns. A gate insulation layer may be provided on the channel fins. A gate electrode may include lower gate patterns and an upper gate pattern. The lower gate patterns may extend in a vertical direction and contact the gate insulation layer. The upper gate pattern may extend in a second horizontal direction substantially perpendicular to the first horizontal direction. The upper gate pattern may be connected to upper portions of the lower gate patterns.
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patent: 6252284 (2001-06-01), Muller et al.
patent: 6642090 (2003-11-01), Fried et al.
patent: 2004/0256647 (2004-12-01), Lee et al.
patent: 2005/0104096 (2005-05-01), Lee et al.
patent: 2005/0145932 (2005-07-01), Park et al.
patent: 08-139325 (1996-05-01), None
patent: 1020030020644 (2003-03-01), None
Lee Choong-Ho
Lee Chul
Park Dong-Gun
Yoon Jae-Man
Bernstein Allison P
Elms Richard T.
Harness & Dickey & Pierce P.L.C.
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