Drain-extended MOS transistors and methods for making the same

Details Drain-extended MOS transistors and methods for making the same Drain-extended MOS transistors and methods for making the same

2008-09-23

2008-09-23

Gurley, Lynne A. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S336000, C257S337000, C257S338000, C257S339000, C257S340000, C257S341000, C257S342000, C257S343000, C257S491000, C257S492000, C257S493000, C257SE29256

Reexamination Certificate

active

10880907

ABSTRACT:
Drain-extended MOS transistors (T1, T2) and semiconductor devices (102) are described, as well as fabrication methods (202) therefor, in which a p-buried layer (130) is formed prior to formation of epitaxial silicon (106) over a substrate (104), and a drain-extended MOS transistor (T1, T2) is formed in the epitaxial silicon layer (106). The p-buried layer (130) may be formed above an n-buried layer (120) in the substrate (104) for high-side driver transistor (T2) applications, wherein the p-buried layer (130) extends between the drain-extended MOS transistor (T2) and the n-buried layer (120) to inhibit off-state breakdown between the source (154) and drain (156).

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