Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-07-08
2008-07-08
Warren, Matthew E (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S369000, C257S401000, C257S506000
Reexamination Certificate
active
10007332
ABSTRACT:
Performance matching devices in SOI are improved by thermally isolating matched devices within a continuous body of active material. Matched devices are isolated by an insulating wall of silicon dioxide (which surrounds the devices) and the oxide layer beneath, and are arranged to minimize effects from external thermal sources.
REFERENCES:
patent: 5378919 (1995-01-01), Ochiai
patent: 5489792 (1996-02-01), Hu et al.
patent: 5724336 (1998-03-01), Morton
patent: 5895956 (1999-04-01), Oowaki et al.
patent: 6037808 (2000-03-01), Houston et al.
patent: 6072224 (2000-06-01), Tyson et al.
patent: 6087894 (2000-07-01), Barrett et al.
patent: 6104068 (2000-08-01), Forbes
patent: 6133608 (2000-10-01), Flaker et al.
patent: 6624459 (2003-09-01), Dachtera et al.
patent: 6244420 (1994-09-01), None
Brady III W. James
Keagy Rose Alyssa
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Warren Matthew E
LandOfFree
Thermal coupling of matched SOI device bodies does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Thermal coupling of matched SOI device bodies, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thermal coupling of matched SOI device bodies will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3908679