Method for fabricating a semiconductor device including a...

Details Method for fabricating a semiconductor device including a... Method for fabricating a semiconductor device including a...

2008-01-29

2008-01-29

Tran, Thien F (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S570000, C257SE29317

Reexamination Certificate

active

10736605

ABSTRACT:
A semiconductor device has a Group III nitride semiconductor layer and a gate electrode formed on the Group III nitride semiconductor layer. The gate electrode contains an adhesion enhancing element. A thermally oxidized insulating film is interposed between the Group III nitride semiconductor layer and the gate electrode.

REFERENCES:
patent: 5358666 (1994-10-01), Sasaki
patent: 6057564 (2000-05-01), Rennie
patent: 6297538 (2001-10-01), Kolodzey et al.
patent: 2-119145 (1990-05-01), None
patent: 7-297206 (1995-11-01), None
patent: 10-223901 (1998-08-01), None
patent: 11-54798 (1999-02-01), None
patent: 2000-174285 (2000-03-01), None
patent: 2000-150792 (2000-05-01), None
patent: 2001-156081 (2001-06-01), None
patent: 2002-246589 (2002-08-01), None
patent: 2002-329863 (2002-11-01), None
Liu et al., “Ni and Ni silicide Schottky contacts on n-GaN”, Journal of Applied Physics, vol. 84, No. 2, pp. 881-886, Jul. 15, 1998.
Hashizume, T., et al. “Characterization of GaN and AlGaN Surfaces and Their Insulated Gate Structures.” The Institute of Electronics. Information and Communication Engineers. Technical Report of IEICE., ED2002-87, LQE2002-62 (Jun. 2002). pp. 57-60, Jun. 14, 2002.
Kusunoki, S., et al. “Hot-Carrier-Resistant Structure by Re-oxidized Nitrided Oxide Sidewall for Highly Reliable and High Performance LDD MOSFETS.”, IEEE, IEDM 91, 25.4.1-25.4.4, pp. 349-652, 1991.
Japanese Office Action issued in Japanese Patent Application No. 2003-409516 dated Oct. 16, 2007.

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