Memory cells utilizing metal-to-metal capacitors to reduce...

Details Memory cells utilizing metal-to-metal capacitors to reduce... Memory cells utilizing metal-to-metal capacitors to reduce...

2008-05-20

2008-05-20

Nguyen, Viet Q (Department: 2827)

Static information storage and retrieval

Systems using particular element

Capacitors

C365S063000, C365S104000, C365S156000, C365S072000

Reexamination Certificate

active

11503694

ABSTRACT:
Structures and methods of adding metal-to-metal capacitors to static memory cells to reduce susceptibility to SEUs. The addition of metal-to-metal capacitors is particularly suited to programmable logic devices (PLDs), because of the relatively large area required to implement an effective metal-to-metal capacitor, compared (for example) to the size of the static memory cell itself. The configuration memory cells of PLDs are typically placed next to other logic (e.g., the configurable elements controlled by the configuration memory cells) that can be overlain by the metal-to-metal capacitors. Therefore, metal-to-metal capacitors can be used in PLD configuration memory cells where they might be impractical in simple memory arrays. However, metal-to-metal capacitors can also be applied to integrated circuits other than PLDs.

REFERENCES:
patent: 4638463 (1987-01-01), Rockett, Jr.
patent: 4912675 (1990-03-01), Blake et al.
patent: 4984203 (1991-01-01), Shookhtim et al.
patent: 5018102 (1991-05-01), Houston
patent: 5046044 (1991-09-01), Houston et al.
patent: 5220532 (1993-06-01), Kertis
patent: 5307142 (1994-04-01), Corbett et al.
patent: 5341009 (1994-08-01), Young et al.
patent: 5396454 (1995-03-01), Nowak
patent: 5489544 (1996-02-01), Rajeevakumar
patent: 5504703 (1996-04-01), Bansal
patent: 5681769 (1997-10-01), Lien
patent: 5691935 (1997-11-01), Douglass
patent: 5844837 (1998-12-01), Yoshikawa
patent: 5905290 (1999-05-01), Houston
patent: 5912212 (1999-06-01), Blake et al.
patent: 5917212 (1999-06-01), Blake et al.
patent: 6104631 (2000-08-01), El-Sharawy et al.
patent: 6111780 (2000-08-01), Bertin
patent: 6252433 (2001-06-01), Stecklein
patent: 6265764 (2001-07-01), Kinsman
patent: 6369630 (2002-04-01), Rockett, Jr.
patent: 6377097 (2002-04-01), Shuler, Jr.
patent: 6510076 (2003-01-01), Lapadat et al.
patent: 6549443 (2003-04-01), Jensen et al.
patent: 6649456 (2003-11-01), Liaw
patent: 6703858 (2004-03-01), Knowles
patent: 6744661 (2004-06-01), Shubat
patent: 6867131 (2005-03-01), Wang et al.
patent: 6870404 (2005-03-01), Maangat
patent: 6876572 (2005-04-01), Turner
patent: 6908821 (2005-06-01), Kim
patent: 6961279 (2005-11-01), Simko
patent: 6970374 (2005-11-01), Lin
patent: 6980462 (2005-12-01), Ramesh
patent: 6982197 (2006-01-01), Ku et al.
patent: 7064574 (2006-06-01), Voogel et al.
patent: 7110281 (2006-09-01), Voogel et al.
patent: 7145194 (2006-12-01), Nishida et al.
patent: 7301796 (2007-11-01), Voogel et al.
patent: 407161843 (1995-06-01), None
patent: 409036252 (1997-02-01), None
patent: 02002083882 (2002-03-01), None
patent: 02004146844 (2004-05-01), None
patent: 02004342790 (2004-12-01), None
patent: WO9963542 (1999-12-01), None
STMicroelectronics; “New Chip Technology from STMicroelectronics Eliminates “Soft Error” Threat to Electronic Systems”; downloaded on Mar. 15, 2004 from http://www.stmicroelectronics.com/stonline/press
ews/year2003/ t1394h.htm; pp. 1-3.

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