Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With movement of substrate or vapor or gas supply means...
Reexamination Certificate
2008-07-15
2008-07-15
Ghyka, Alexander G (Department: 2812)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With movement of substrate or vapor or gas supply means...
C438S149000, C438S795000, C257SE21582
Reexamination Certificate
active
10953312
ABSTRACT:
Method and system for generating a metal thin film with a uniform crystalline orientation and a controlled crystalline microstructure are provided. For example, a metal layer is irradicated with a pulsed laser to completely melt the film throughout its entire thickness. The metal layer can then resolidify to form grains with a substantially uniform orientation. The resolidified metal layer can be irradiated with a sequential lateral solidification technique to modify the crystalline microstructure (e.g., create larger grains, single-crystal regions, grain boundary controlled microstructures, etc.) The metal layer can be irradiated by patterning a beam using a mask which includes a first region capable of attenuating the pulsed laser and a second region allowing complete irradiation of sections of the thin film being impinged by the masked laser beam. An inverse dot-patterned mask can be used, the microstructure that may have substantially the same as the geometric pattern as that of the dots of the mask.
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K.H. Weiner et al., “Ultrashall
Choi Jae Beom
Im James S.
Baker & Botts LLP
Ghyka Alexander G
The Trustees of Columbia University in theCity of New York
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