Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-09-09
2008-09-09
Nguyen, Tuan H (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S300000
Reexamination Certificate
active
11149236
ABSTRACT:
A semiconductor device in which a semiconductor layer of a thin film transistor and a first electrode of a capacitor are formed of amorphous silicon and the whole or a part of source/drain regions of the semiconductor layer and the first electrode of the capacitor are crystallized by a metal induced crystallization method, and a channel region of the semiconductor layer is crystallized by a metal induced lateral crystallization method.
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Lee Ki-Yong
Park Byoung-Keon
Seo Jin-Wook
Yang Tae-Hoon
H.C. Park & Associates PLC
Nguyen Tuan H
Samsung SDI & Co., Ltd.
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