Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-04-29
2008-04-29
Smith, Matthew (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29117
Reexamination Certificate
active
10919657
ABSTRACT:
Transistors are formed by depositing at least one layer of semiconductor material on a substrate comprising a polyphenylene polyimide. The substrate permits the use of processing temperatures in excess of 300° C. during the processes used to form the transistors, thus allowing the formation of high quality silicon semiconductor layers. The substrate also has a low coefficient of thermal expansion, which closely matches that of silicon, thus reducing any tendency for a silicon layer to crack or delaminate.
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Chen Yu
Denis Kevin L
Drzaic Paul S
Jacobson Joseph M
Kazlas Peter T
Cole David J.
E Ink Corporation
Nguyen Khiem D
Smith Matthew
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