Semiconductor integrated circuit device

Details Semiconductor integrated circuit device Semiconductor integrated circuit device

2007-10-09

2007-10-09

Tan, Vibol (Department: 2819)

Electronic digital logic circuitry

Interface

Supply voltage level shifting

C365S185330, C326S113000, C326S063000

Reexamination Certificate

active

11226585

ABSTRACT:
A semiconductor integrated circuit device has an electrically rewritable non-volatile memory that operates with a first power supply, and a second circuit that operates with a second power supply having a voltage lower than the voltage of the first power supply. The second circuit has a gate oxide film which is thinner than the gate oxide file of the electrically rewritable non-volatile memory. A depletion NMOS transistor has a gate connected to the second power supply, a gate oxide film whose thickness is the same as that of the gate oxide film of the electrically rewritable non-volatile memory, and transmits a signal from an output terminal of the electrically rewritable non-volatile memory to an input terminal of the second circuit.

REFERENCES:
patent: 4916334 (1990-04-01), Minagawa et al.
patent: 5136541 (1992-08-01), Arakawa
patent: 5208488 (1993-05-01), Takiba et al.
patent: 5590074 (1996-12-01), Akaogi et al.
patent: 6169690 (2001-01-01), Iwahashi
patent: 6768338 (2004-07-01), Young et al.
patent: 2002/0060928 (2002-05-01), Iwahashi
patent: 2004/0202025 (2004-10-01), Seki et al.

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