Semiconductor structure having thick stabilization layer

Details Semiconductor structure having thick stabilization layer Semiconductor structure having thick stabilization layer

2007-08-07

2007-08-07

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S328000, C257S329000, C257S330000, C257S331000, C257S332000, C257S333000, C257S334000

Reexamination Certificate

active

10855794

ABSTRACT:
A semiconductor structure has a semiconductor substrate (3, 4), on/in whose top side a structure comprising semiconductor layers, metal layers and insulator layers (5) is applied/impressed. An as far as possible contiguous stabilization layer (6, 10) made of metal and/or passivation material is applied on the applied/impressed metal/semiconductor/insulator layer structure (5).

REFERENCES:
patent: 5602046 (1997-02-01), Calafut et al.
patent: 6015990 (2000-01-01), Hieda et al.
patent: 6066877 (2000-05-01), Williams et al.
patent: 2002/0030224 (2002-03-01), Hshieh et al.
patent: 2002/0142548 (2002-10-01), Takaishi
patent: 100 43 955 (2002-04-01), None

Affiliated with

Also associated with

Rating

Semiconductor structure having thick stabilization layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor structure having thick stabilization layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor structure having thick stabilization layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3900003